Пошуковий запит: (<.>TJ=Semiconductor Physics, Quantum Electronics and Optoelectronics<.>) |
Загальна кількість знайдених документів : 1765
Представлено документи з 1 до 20
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Litovchenko N. M. About influences of different actions on spectra of impurity photoluminescence in GaAs // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2001. - 4, № 3.
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Melnik V. AES and XPS characterization of TiN layers formed and modified by ion implantation // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 1999. - 2, № 3.
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Bilyi O. I. Algorithm of microchip operation for controlling parameters of a latex agglutination reaction // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2001. - 4, № 3.
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Kravets V. G. Characterization and optical properties of organic dye films as recording media // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2000. - 3, № 4.
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Goncharenko A. V. Conductivity of two-phase composite: an approach based on bounds // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 1999. - 2, № 4.
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Bobitski Y. W. Coupling between propagated modes in optical fibres with periodical structures // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2001. - 4, № 3.
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Kovalenko S. A. Descartes - Snell law of refraction with absorption // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2001. - 4, № 3.
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Dyadyusha A. G. Development of personal biodosimeter of UV radiation based on vitamin D photosynthesis in nematic liquid crystal matrix // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 1999. - 2, № 4.
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Baranskii P. I. Development of the physical insight into the nature of the factors that control electrophysical and other properties of semiconductors // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2001. - 4, № 1.
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Anokhov S. Diffraction of optical beam by a half-plane // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2000. - 3, № 1.
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Voznyy M. V. Diffusion model of defect formation in silicon under light ion implantation // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2000. - 3, № 3.
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Kruglenko I. V. Digital aroma technology for chemical sensing: temporal chemical images of complex mixtures // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2000. - 3, № 4.
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Goncharenko A. V. Dispersion of natural modes of a many-layer planar system // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2000. - 3, № 3.
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Serdega B. K. Effect of surface condition on strain in semiconductor crystal sample // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2001. - 4, № 1.
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Lysenko V. S. Effect of the charge state of traps on the transport current in the SiC/Si heterostructure // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2000. - 3, № 3.
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Sachenko A. V. Evaluation of the efficiency of interband radiative recombination in high quality Si // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 1999. - 2, № 4.
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17. |
Monastyrskii L. S. Features of electrical charge transfer in porous silicon // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2001. - 4, № 1.
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18. |
Davidenko I. I. Features of photoinduced charge transfer in photomagnetic garnets YIG:Si and YIG:Co // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2001. - 4, № 3.
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Karpov H. M. Generalized model of holographic recording in photopolymeric materials // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 1999. - 2, № 3.
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20. |
Sosnin A. Image infrared converters based on ferroelectric-semiconductor thin-layer systems // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2000. - 3, № 4.
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